Opto Diode Corporation, an ITW company, announces a gallium aluminum arsenide (GaAlAs) near-infrared (IR) LED illuminator with ultra-high-power output, the OD-663-850. Specially designed for use in surveillance and night vision applications, the device has a very uniform optical beam with a peak emission wavelength of 850 nm.
Other features include total power output from 300 mW (minimum) to 425 mW (typical), with forward voltage from 4.8 V (typical) to 5.4 V (maximum). The spectral bandwidth is 40 nm with a half intensity beam angle of 120 degrees. Reverse breakdown voltage ranges from a minimum of 5 V to 30 V (typical); rise and fall times are 100 nsec, respectively.
Housed in a standard, 2-lead TO-66 electrically-isolated package, the OD-663-850 is ideal for use in high-power, near-infrared illumination tasks. With power dissipation at 2.2 W, Opto Diode’s GaAlAs IRLED features a continuous forward current of 400 mA, peak forward current of 1 A, and reverse voltage of 5 V. The lead soldering temperature (1/16” from the case for 10 seconds) is 260 °C. Storage and operating temperatures range from 40 °C to 100 °C with a maximum junction temperature of 100 °C.
To view graphs showing the maximum thermal derating curve, typical degradation and radiation-pattern curves, typical spectral output, and more, please go to Opto Diode’s high-power GaAlAs IRLED illuminator data sheet here:https://optodiode.com/pdf/
For more information about Opto Diode’s full line of photodetectors, sensors, optoelectronic modules, visible and/or infrared LEDs, and photonics assemblies for critical applications, visit: www.optodiode.com.